All Transistors. 3DD275 Datasheet

 

3DD275 Datasheet and Replacement


   Type Designator: 3DD275
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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3DD275 Datasheet (PDF)

 ..1. Size:26K  shaanxi
 3dd275.pdf pdf_icon

3DD275

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD275(3DD276)NPN Silicon Low Frequency High Power Transistor Features: 6. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 7. Good temperature stability.Excellent thermal fatigue capability. 8. Implementation of standards: GJB33 A-97 9. Use for Low-

 9.1. Size:32K  shaanxi
 3dd271.pdf pdf_icon

3DD275

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD271(272), 3DD275(276) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. U

Datasheet: 3DD257 , 3DD259 , 3DD260 , 3DD262 , 3DD264 , 3DD2655 , 3DD267 , 3DD271 , D209L , 3DD3 , 3DD3015A1 , 3DD3015A3 , 3DD3020A3 , 3DD3020A4 , 3DD3020A6 , 3DD3040A1 , 3DD3040A3 .

Keywords - 3DD275 transistor datasheet

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