3DD275 Specs and Replacement
Type Designator: 3DD275
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 7
Package: TO3
3DD275 Substitution
- BJT ⓘ Cross-Reference Search
3DD275 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD275(3DD276) NPN Silicon Low Frequency High Power Transistor Features 6. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 7. Good temperature stability.Excellent thermal fatigue capability. 8. Implementation of standards GJB33 A-97 9. Use for Low-... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD271(272), 3DD275(276) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. U... See More ⇒
Detailed specifications: 3DD257, 3DD259, 3DD260, 3DD262, 3DD264, 3DD2655, 3DD267, 3DD271, 8550, 3DD3, 3DD3015A1, 3DD3015A3, 3DD3020A3, 3DD3020A4, 3DD3020A6, 3DD3040A1, 3DD3040A3
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