All Transistors. 3DD31B Datasheet

 

3DD31B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DD31B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220

 3DD31B Transistor Equivalent Substitute - Cross-Reference Search

   

3DD31B Datasheet (PDF)

 ..1. Size:138K  lzg
3dd31b.pdf

3DD31B
3DD31B

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

 9.1. Size:151K  crhj
3dd3145 a6.pdf

3DD31B
3DD31B

NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot TC=25 50 W

 9.2. Size:153K  crhj
3dd3145 a8.pdf

3DD31B
3DD31B

NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60

 9.3. Size:153K  crhj
3dd3150 a8.pdf

3DD31B
3DD31B

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

 9.4. Size:153K  crhj
3dd3150a8.pdf

3DD31B
3DD31B

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

 9.5. Size:148K  crhj
3dd3145a6.pdf

3DD31B
3DD31B

NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot W TC=25 50

 9.6. Size:152K  crhj
3dd3145a8.pdf

3DD31B
3DD31B

NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60

 9.7. Size:103K  china
3dd31ct4.pdf

3DD31B
3DD31B

LJ2015-463DD31CT4 NPN P T =25 1 Wtot AI 3 ACI 5 ACMT 150 jmT -55~150 stgV I =1mA 100 V(BR)CBO CBV I =1mA 100 V(BR)CEO CEV I =1mA 5.0 V(BR)EBO EBI V =60V 50 ACEO CBI V =5V 0.1 mAEBO CEI =3ACV 1.2 VC

 9.8. Size:346K  lzg
3dd3150a.pdf

3DD31B
3DD31B

2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V

 9.9. Size:138K  lzg
3dd31a.pdf

3DD31B
3DD31B

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

 9.10. Size:138K  lzg
3dd31.pdf

3DD31B
3DD31B

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

 9.11. Size:358K  lzg
3dd313.pdf

3DD31B
3DD31B

2SD313(3DD313) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 60 V CEO V 5.0 V EBO I 3.0 A C I 8.0 A CPP (T =25) 1.75 W C a P (T =25) 30 W C CT 150

 9.12. Size:138K  lzg
3dd31c.pdf

3DD31B
3DD31B

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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