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3DD4G Specs and Replacement

Type Designator: 3DD4G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO276AB TO220 TO257

 3DD4G Substitution

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3DD4G datasheet

 ..1. Size:166K  china

 3dd4g.pdf pdf_icon

3DD4G

3DD4G I-T NPN G H I PCM Tc=75 10 W ICM 0.75 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 500 600 700 V V(BR)CEO ICE=1mA 400 500 600 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=100V 0.5 mA ICEO VCE=100V 0.5 mA ... See More ⇒

Detailed specifications: 3DD4520A3, 3DD4520A4, 3DD4520A6, 3DD4540A3, 3DD4540A7, 3DD4540A9, 3DD4550A4, 3DD4A, BD139, 3DD5, 3DD50, 3DD505, 3DD507, 3DD51, 3DD510, 3DD511, 3DD512

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