All Transistors. 3DD4G Datasheet

 

3DD4G Datasheet and Replacement


   Type Designator: 3DD4G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.75 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257
 

 3DD4G Substitution

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3DD4G Datasheet (PDF)

 ..1. Size:166K  china
 3dd4g.pdf pdf_icon

3DD4G

3DD4GI-T NPN G H I PCM Tc=75 10 W ICM 0.75 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 500 600 700 V V(BR)CEO ICE=1mA 400 500 600 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=100V 0.5 mA ICEO VCE=100V 0.5 mA

Datasheet: 3DD4520A3 , 3DD4520A4 , 3DD4520A6 , 3DD4540A3 , 3DD4540A7 , 3DD4540A9 , 3DD4550A4 , 3DD4A , 2N5551 , 3DD5 , 3DD50 , 3DD505 , 3DD507 , 3DD51 , 3DD510 , 3DD511 , 3DD512 .

History: 2SD1354O | BCW96A | KRA223 | KRA224 | BLW21

Keywords - 3DD4G transistor datasheet

 3DD4G cross reference
 3DD4G equivalent finder
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