All Transistors. 3DD4G Datasheet

 

3DD4G Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DD4G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.75 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257

 3DD4G Transistor Equivalent Substitute - Cross-Reference Search

   

3DD4G Datasheet (PDF)

 ..1. Size:166K  china
 3dd4g.pdf

3DD4G

3DD4GI-T NPN G H I PCM Tc=75 10 W ICM 0.75 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 500 600 700 V V(BR)CEO ICE=1mA 400 500 600 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=100V 0.5 mA ICEO VCE=100V 0.5 mA

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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