All Transistors. 3DD4G Datasheet

 

3DD4G Datasheet and Replacement


   Type Designator: 3DD4G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.75 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257
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3DD4G Datasheet (PDF)

 ..1. Size:166K  china
 3dd4g.pdf pdf_icon

3DD4G

3DD4GI-T NPN G H I PCM Tc=75 10 W ICM 0.75 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 500 600 700 V V(BR)CEO ICE=1mA 400 500 600 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=100V 0.5 mA ICEO VCE=100V 0.5 mA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CJF6668 | BFS17W | GES3566 | 2N3507A | SRA2201UF | GET3563 | KTD1347

Keywords - 3DD4G transistor datasheet

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