3DD6E-T Specs and Replacement
Type Designator: 3DD6E-T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
3DD6E-T Substitution
- BJT ⓘ Cross-Reference Search
3DD6E-T datasheet
isc Silicon NPN Power Transistor 3DD6E DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =10(Min)@I = 2.5A FE C Low Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which c... See More ⇒
Detailed specifications: 3DD6012A6, 3DD62, 3DD63, 3DD64, 3DD65, 3DD66, 3DD68, 3DD69, 2SD718, 3DD7, 3DD71, 3DD73, 3DD741A4, 3DD741A8, 3DD742A8, 3DD7525A3, 3DD8
Keywords - 3DD6E-T pdf specs
3DD6E-T cross reference
3DD6E-T equivalent finder
3DD6E-T pdf lookup
3DD6E-T substitution
3DD6E-T replacement
