All Transistors. 3DD6E-T Datasheet

 

3DD6E-T Datasheet and Replacement


   Type Designator: 3DD6E-T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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3DD6E-T Datasheet (PDF)

 ..1. Size:110K  china
 3dd6e-t.pdf pdf_icon

3DD6E-T

3DD6E-T NPN PCM 50 W ICM 5.0 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=3.0mA 350 V V(BR)CEO ICE=3.0mA 250 V V(BR)EBO IEB=1.0mA 5.0 V ICEO VCE=100V 1.0 mA VBEsat 1.5 IC=2.5A V IB=0.25A VCEsat 1.2 VCE=5.0V hFE 15~270 IC=2.5A

 9.1. Size:221K  inchange semiconductor
 3dd6e.pdf pdf_icon

3DD6E-T

isc Silicon NPN Power Transistor 3DD6EDESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =10(Min)@I = 2.5AFE CLow Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high power audio ,disk head positioners andother linear applications, which c

Datasheet: 3DD6012A6 , 3DD62 , 3DD63 , 3DD64 , 3DD65 , 3DD66 , 3DD68 , 3DD69 , 2SC2073 , 3DD7 , 3DD71 , 3DD73 , 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 .

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