All Transistors. 3DD6E-T Datasheet

 

3DD6E-T Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD6E-T

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

3DD6E-T Transistor Equivalent Substitute - Cross-Reference Search

3DD6E-T Datasheet (PDF)

1.1. 3dd6e-t.pdf Size:110K _china

3DD6E-T

3DD6E-T 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM 50 W 极 ICM 5.0 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=3.0mA ≥350 V V(BR)CEO ICE=3.0mA ≥250 V V(BR)EBO IEB=1.0mA ≥5.0 V 直 流 ICEO VCE=100V ≤1.0 mA 参 VBEsat ≤1.5 IC=2.5A V 数 IB=0.25A VCEsat ≤1.2 VCE=5.0V hFE 15~270 IC=2.5A 外

Datasheet: 3DD6012A6 , 3DD62 , 3DD63 , 3DD64 , 3DD65 , 3DD66 , 3DD68 , 3DD69 , 2N2907 , 3DD7 , 3DD71 , 3DD73 , 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 .

 


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