All Transistors. 3DD73 Datasheet

 

3DD73 Datasheet and Replacement


   Type Designator: 3DD73
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: AZ1
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3DD73 Datasheet (PDF)

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3DD73

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD73NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97 3. Use for Low-speed switch, power amplify,power adjustm

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | DT5335 | MJE13011 | ZXTP2012Z

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