3DD73 Specs and Replacement
Type Designator: 3DD73
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: AZ1
3DD73 Substitution
- BJT ⓘ Cross-Reference Search
3DD73 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD73 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop. Excellent out-put characteristic. 2. Implementation of standards GJB33 A-97 3. Use for Low-speed switch, power amplify,power adjustm... See More ⇒
Detailed specifications: 3DD64, 3DD65, 3DD66, 3DD68, 3DD69, 3DD6E-T, 3DD7, 3DD71, 2SC2073, 3DD741A4, 3DD741A8, 3DD742A8, 3DD7525A3, 3DD8, 3DD810, 3DD820, 3DD831
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