All Transistors. 3DD810 Datasheet

 

3DD810 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD810

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3_TO257

3DD810 Transistor Equivalent Substitute - Cross-Reference Search

3DD810 Datasheet (PDF)

1.1. 3dd810.pdf Size:125K _china

3DD810

3DD810 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM Tc=75℃ 50 W ICM 8 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2.0 ℃/W Ic=5.0A 25℃≤Tc≤75℃ V(BR)CBO ICB=5mA ≥150 V V(BR)CEO ICE=5mA ≥100 V V(BR)EBO IEB=5mA ≥5.0 V ICBO VCB=50V, ≤1.5 μA 直 流 ICEO VCE=50V ≤2.0 mA 参 IEBO VEB=4.0V ≤1.5

Datasheet: 3DD7 , 3DD71 , 3DD73 , 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 , BC109 , 3DD820 , 3DD831 , 3DD8E , 3DD9 , 3DD99 , 3DD9D , 3DD9E , 3DF05 .

 


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