3DD810 PDF and Equivalents Search

 

3DD810 Specs and Replacement

Type Designator: 3DD810

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3 TO257

 3DD810 Substitution

- BJT ⓘ Cross-Reference Search

 

3DD810 datasheet

 ..1. Size:125K  china

 3dd810.pdf pdf_icon

3DD810

3DD810 NPN PCM Tc=75 50 W ICM 8 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W Ic=5.0A 25 Tc 75 V(BR)CBO ICB=5mA 150 V V(BR)CEO ICE=5mA 100 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V, 1.5 A ICEO VCE=50V 2.0 mA IEBO VEB=4.0V 1.5... See More ⇒

Detailed specifications: 3DD7, 3DD71, 3DD73, 3DD741A4, 3DD741A8, 3DD742A8, 3DD7525A3, 3DD8, MJE340, 3DD820, 3DD831, 3DD8E, 3DD9, 3DD99, 3DD9D, 3DD9E, 3DF05

Keywords - 3DD810 pdf specs

 3DD810 cross reference

 3DD810 equivalent finder

 3DD810 pdf lookup

 3DD810 substitution

 3DD810 replacement

 

 

 

 

↑ Back to Top
.