All Transistors. 3DD810 Datasheet

 

3DD810 Datasheet and Replacement


   Type Designator: 3DD810
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3 TO257
 

 3DD810 Substitution

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3DD810 Datasheet (PDF)

 ..1. Size:125K  china
 3dd810.pdf pdf_icon

3DD810

3DD810 NPN PCM Tc=75 50 W ICM 8 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W Ic=5.0A 25Tc75 V(BR)CBO ICB=5mA 150 V V(BR)CEO ICE=5mA 100 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V, 1.5 A ICEO VCE=50V 2.0 mA IEBO VEB=4.0V 1.5

Datasheet: 3DD7 , 3DD71 , 3DD73 , 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 , 2SA1837 , 3DD820 , 3DD831 , 3DD8E , 3DD9 , 3DD99 , 3DD9D , 3DD9E , 3DF05 .

History: DRA4144T | DTC014EUB | RT1N141U

Keywords - 3DD810 transistor datasheet

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