All Transistors. 3DD820 Datasheet

 

3DD820 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD820

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

3DD820 Transistor Equivalent Substitute - Cross-Reference Search

 

3DD820 Datasheet (PDF)

1.1. 3dd820.pdf Size:114K _china

3DD820

3DD820 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM Tc=75℃ 50 W ICM 5 A 极 Tjm 150 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2.5 ℃/W Ic=2.5A 25℃≤Tc≤75℃ V(BR)CBO ICB=5mA ≥1500 V V(BR)CEO ICE=5mA ≥600 V V(BR)EBO IEB=5mA ≥5.0 V 直 ICBO VCB=VCBO, ≤1.0 mA 流 ICEO VCE=0.5VCEO ≤1.0 mA 参 Ic=4A VCEsat

Datasheet: 3DD71 , 3DD73 , 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 , 3DD810 , BD135 , 3DD831 , 3DD8E , 3DD9 , 3DD99 , 3DD9D , 3DD9E , 3DF05 , 3DF1 .

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