3DD820 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD820
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
3DD820 Transistor Equivalent Substitute - Cross-Reference Search
3DD820 Datasheet (PDF)
..1. Size:114K china
3dd820.pdf
3dd820.pdf
3DD820 NPN PCM Tc=75 50 W ICM 5 A Tjm 150 Tstg -55~150 VCE=10V Rth 2.5 /W Ic=2.5A 25Tc75 V(BR)CBO ICB=5mA 1500 V V(BR)CEO ICE=5mA 600 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=VCBO, 1.0 mA ICEO VCE=0.5VCEO 1.0 mA Ic=4A VCEsat
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
