All Transistors. 3DD820 Datasheet

 

3DD820 Datasheet and Replacement


   Type Designator: 3DD820
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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3DD820 Datasheet (PDF)

 ..1. Size:114K  china
 3dd820.pdf pdf_icon

3DD820

3DD820 NPN PCM Tc=75 50 W ICM 5 A Tjm 150 Tstg -55~150 VCE=10V Rth 2.5 /W Ic=2.5A 25Tc75 V(BR)CBO ICB=5mA 1500 V V(BR)CEO ICE=5mA 600 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=VCBO, 1.0 mA ICEO VCE=0.5VCEO 1.0 mA Ic=4A VCEsat

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | SS8550DBU | PHPT60406NY | KSA643Y | CS9011I | KRC111 | LDTA115EET1G

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