3DD820 Specs and Replacement
Type Designator: 3DD820
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3DD820 Substitution
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3DD820 datasheet
3DD820 NPN PCM Tc=75 50 W ICM 5 A Tjm 150 Tstg -55 150 VCE=10V Rth 2.5 /W Ic=2.5A 25 Tc 75 V(BR)CBO ICB=5mA 1500 V V(BR)CEO ICE=5mA 600 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=VCBO, 1.0 mA ICEO VCE=0.5VCEO 1.0 mA Ic=4A VCEsat ... See More ⇒
Detailed specifications: 3DD71, 3DD73, 3DD741A4, 3DD741A8, 3DD742A8, 3DD7525A3, 3DD8, 3DD810, 2SC1815, 3DD831, 3DD8E, 3DD9, 3DD99, 3DD9D, 3DD9E, 3DF05, 3DF1
Keywords - 3DD820 pdf specs
3DD820 cross reference
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