3DD8E Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD8E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO3
3DD8E Transistor Equivalent Substitute - Cross-Reference Search
3DD8E Datasheet (PDF)
3dd8e.pdf
3DD8ET NPN PCM TC75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.0 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=100V 5.0 mA IC=5A VCEsat 1.5 V IB=0.5A VCE=5V hFE 7180
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUL56BSMD | KTC3730V | CZTA28 | 2SC45 | BUL310
History: BUL56BSMD | KTC3730V | CZTA28 | 2SC45 | BUL310
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