All Transistors. 3DD8E Datasheet

 

3DD8E Datasheet and Replacement


   Type Designator: 3DD8E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

 3DD8E Substitution

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3DD8E Datasheet (PDF)

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3DD8E

3DD8ET NPN PCM TC75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.0 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=100V 5.0 mA IC=5A VCEsat 1.5 V IB=0.5A VCE=5V hFE 7180

Datasheet: 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 , 3DD810 , 3DD820 , 3DD831 , B772 , 3DD9 , 3DD99 , 3DD9D , 3DD9E , 3DF05 , 3DF1 , 3DF5 , 3DG100 .

History: BCW68GL

Keywords - 3DD8E transistor datasheet

 3DD8E cross reference
 3DD8E equivalent finder
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