All Transistors. 3DD8E Datasheet

 

3DD8E Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD8E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

3DD8E Transistor Equivalent Substitute - Cross-Reference Search

3DD8E Datasheet (PDF)

1.1. 3dd8e.pdf Size:154K _china

3DD8E

3DD8E—T 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC≤75℃ 100 W ICM 10 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 1.0 ℃/W IC=3A V(BR)CBO ICB=5mA ≥350 V V(BR)CEO ICE=5mA ≥250 V V(BR)EBO IEB=5mA ≥5.0 V 直 ICEO VCE=100V ≤5.0 mA 流 参 IC=5A VCEsat ≤1.5 V 数 IB=0.5A VCE=5V hFE 7~180

Datasheet: 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 , 3DD810 , 3DD820 , 3DD831 , BC546 , 3DD9 , 3DD99 , 3DD9D , 3DD9E , 3DF05 , 3DF1 , 3DF5 , 3DG100 .

 


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