3DD8E Specs and Replacement
Type Designator: 3DD8E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 7
Package: TO3
3DD8E Substitution
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3DD8E datasheet
3DD8E T NPN PCM TC 75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.0 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=100V 5.0 mA IC=5A VCEsat 1.5 V IB=0.5A VCE=5V hFE 7 180... See More ⇒
Detailed specifications: 3DD741A4, 3DD741A8, 3DD742A8, 3DD7525A3, 3DD8, 3DD810, 3DD820, 3DD831, A940, 3DD9, 3DD99, 3DD9D, 3DD9E, 3DF05, 3DF1, 3DF5, 3DG100
Keywords - 3DD8E pdf specs
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History: 3DD9E
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