3DD9E pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DD9E Specs and Replacement

Type Designator: 3DD9E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

3DD9E Substitution

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3DD9E datasheet

..1. Size:154K china

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..2. Size:193K inchange semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD9E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications A... See More ⇒

Detailed specifications: 3DD8, 3DD810, 3DD820, 3DD831, 3DD8E, 3DD9, 3DD99, 3DD9D, TIP35C, 3DF05, 3DF1, 3DF5, 3DG100, 3DG1009A, 3DG101, 3DG102, 3DG103