All Transistors. 3DD9E Datasheet

 

3DD9E Datasheet and Replacement


   Type Designator: 3DD9E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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3DD9E Datasheet (PDF)

 ..1. Size:154K  china
 3dd9e.pdf pdf_icon

3DD9E

3DD9ET NPN PCM TC75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.67 /W IC=3A V(BR)CBO ICB=5mA 350 V V(BR)CEO ICE=5mA 250 V V(BR)EBO IEB=10mA 5.0 V ICEO VCE=100V 5.0 mA IC=7.5A VCEsat 1.5 V IB=0.75A VCE=5V hFE 7

 ..2. Size:193K  inchange semiconductor
 3dd9e.pdf pdf_icon

3DD9E

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD9EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsA

Datasheet: 3DD8 , 3DD810 , 3DD820 , 3DD831 , 3DD8E , 3DD9 , 3DD99 , 3DD9D , 2SC1815 , 3DF05 , 3DF1 , 3DF5 , 3DG100 , 3DG1009A , 3DG101 , 3DG102 , 3DG103 .

History: D45D2 | BD533 | FHTL8050M-ME

Keywords - 3DD9E transistor datasheet

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