3DG150 Specs and Replacement
Type Designator: 3DG150
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DG150 Substitution
- BJT ⓘ Cross-Reference Search
3DG150 datasheet
3DG150 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.1mA 30 90 150 210 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A IC=50mA VCEsat 1.0 V IB=5mA VCE=20V hFE 25 270 IC=1... See More ⇒
Detailed specifications: 3DG130, 3DG1317, 3DG1318, 3DG140, 3DG1417, 3DG142, 3DG1473, 3DG1473A, 2SA1015, 3DG160, 3DG161, 3DG162, 3DG1623, 3DG1627A, 3DG1627AF, 3DG1675, 3DG1740M
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