All Transistors. 3DG150 Datasheet

 

3DG150 Datasheet and Replacement


   Type Designator: 3DG150
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
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3DG150 Datasheet (PDF)

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 3dg150.pdf pdf_icon

3DG150

3DG150 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 30 90 150 210 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A IC=50mA VCEsat 1.0 V IB=5mA VCE=20V hFE 25~270 IC=1

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC1738 | HA5020 | 2N626 | FPS6516 | 2N6255 | 2SC2501 | BF871S

Keywords - 3DG150 transistor datasheet

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