All Transistors. 3DG150 Datasheet

 

3DG150 Datasheet and Replacement


   Type Designator: 3DG150
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
 

 3DG150 Substitution

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3DG150 Datasheet (PDF)

 ..1. Size:115K  china
 3dg150.pdf pdf_icon

3DG150

3DG150 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 30 90 150 210 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A IC=50mA VCEsat 1.0 V IB=5mA VCE=20V hFE 25~270 IC=1

Datasheet: 3DG130 , 3DG1317 , 3DG1318 , 3DG140 , 3DG1417 , 3DG142 , 3DG1473 , 3DG1473A , 2SC2240 , 3DG160 , 3DG161 , 3DG162 , 3DG1623 , 3DG1627A , 3DG1627AF , 3DG1675 , 3DG1740M .

History: NSVB143ZPDXV6T1G | MJ4034 | HA5020 | FPS6516 | 2SC2151 | NSVB143TPDXV6T1G | 2SC833

Keywords - 3DG150 transistor datasheet

 3DG150 cross reference
 3DG150 equivalent finder
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