3DG162 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG162
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO18
3DG162 Transistor Equivalent Substitute - Cross-Reference Search
3DG162 Datasheet (PDF)
3dg162.pdf
3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V
3dg1627a.pdf
2SC1627A(3DG1627A) NPN /SILICON NPN TRANSISTOR : Purpose: Driver stage amplifier and voltage amplifier. 3035W 2SA817A(3CG817A) Features: Driver stage of 30 to 35 watts application, complementary pair with 2SA817A(3CG817A)./Absolute maximum ratings(Ta=25
3dg1623.pdf
2SC1623(3DG1623) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency general amplifier application. : h , V 2SA812(3CG812)/Features: High h and V , complementary pair FE CEO, FE CEOwith 2SA812(3CG812). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V
3dg1627af.pdf
2SC1627AF(3DG1627AF) NPN /SILICON NPN TRANSISTOR : Purpose: Driver stage amplifier and voltage amplifier. 3035W 2SA817AF(3CG817AF) Features: Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(3CG817AF). /Absolute maximum ratings(
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
