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3DG162 Specs and Replacement


   Type Designator: 3DG162
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 6 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO18

 3DG162 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG162 detailed specifications

 ..1. Size:114K  china
 3dg162.pdf pdf_icon

3DG162

3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V ... See More ⇒

 0.1. Size:363K  foshan
 3dg1627a.pdf pdf_icon

3DG162

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 0.2. Size:264K  foshan
 3dg1623.pdf pdf_icon

3DG162

2SC1623(3DG1623) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency general amplifier application. h , V 2SA812(3CG812) /Features High h and V , complementary pair FE CEO, FE CEO with 2SA812(3CG812). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V ... See More ⇒

 0.3. Size:386K  foshan
 3dg1627af.pdf pdf_icon

3DG162

2SC1627AF(3DG1627AF) NPN /SILICON NPN TRANSISTOR Purpose Driver stage amplifier and voltage amplifier. 30 35W 2SA817AF(3CG817AF) Features Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(3CG817AF). /Absolute maximum ratings(... See More ⇒

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Detailed specifications: 3DG140 , 3DG1417 , 3DG142 , 3DG1473 , 3DG1473A , 3DG150 , 3DG160 , 3DG161 , 2SD669 , 3DG1623 , 3DG1627A , 3DG1627AF , 3DG1675 , 3DG1740M , 3DG1740S , 3DG1741AM , 3DG1741S .

Keywords - 3DG162 transistor specs

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