3DG1675 Specs and Replacement
Type Designator: 3DG1675
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.9 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
3DG1675 Substitution
- BJT ⓘ Cross-Reference Search
3DG1675 datasheet
2SC1675(3DG1675) NPN /SILICON NPN TRANSISTOR , / , / Purpose AM converter ,AM/FM IF amplifier and local oscillator of AM/FM tuner. , Features Small output capacitance, low noise figure. /Absolute maximum ratings... See More ⇒
2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit ... See More ⇒
3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V ... See More ⇒
3DG161(A G) NPN A B C D E F G PCM TA=25 300 mW ICM 20 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.5mA 60 100 140 180 220 260 300 V 0 V(BR)EBO IEB=0.1mA 5.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VCE=1.5V 0.1 A VBEsat IC=10mA 3... See More ⇒
Detailed specifications: 3DG1473A, 3DG150, 3DG160, 3DG161, 3DG162, 3DG1623, 3DG1627A, 3DG1627AF, 2N2907, 3DG1740M, 3DG1740S, 3DG1741AM, 3DG1741S, 3DG180, 3DG1809, 3DG181, 3DG1815
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