3DG1675 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG1675
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.9 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
3DG1675 Transistor Equivalent Substitute - Cross-Reference Search
3DG1675 Datasheet (PDF)
3dg1675.pdf
2SC1675(3DG1675) NPN /SILICON NPN TRANSISTOR :,/,/ Purpose: AM converter ,AM/FM IF amplifier and local oscillator of AM/FM tuner. :, Features: Small output capacitance, low noise figure. /Absolute maximum ratings
br3dg1684.pdf
2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit
3dg162.pdf
3DG162 NPN A B C D E F G H I J PCM 300 mW IC 20 mA Tjm 175 V(BR)CB ICB=0.1mA 6 10 14 18 22 6 10 14 18 22 V 0 0 0 0 0 0 0 0 0 0 V(BR)CE ICE=0.1mA 6 10 14 18 22 6 10 14 18 22 V O 0 0 0 0 0 V(BR)EB 5.0 0 0 0 0 0 V
3dg161.pdf
3DG161(A~G) NPN A B C D E F G PCM TA=25 300 mW ICM 20 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.5mA 60 100 140 180 220 260 300 V 0 V(BR)EBO IEB=0.1mA 5.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VCE=1.5V 0.1 A VBEsat IC=10mA 3
3dg1627a.pdf
2SC1627A(3DG1627A) NPN /SILICON NPN TRANSISTOR : Purpose: Driver stage amplifier and voltage amplifier. 3035W 2SA817A(3CG817A) Features: Driver stage of 30 to 35 watts application, complementary pair with 2SA817A(3CG817A)./Absolute maximum ratings(Ta=25
3dg1623.pdf
2SC1623(3DG1623) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency general amplifier application. : h , V 2SA812(3CG812)/Features: High h and V , complementary pair FE CEO, FE CEOwith 2SA812(3CG812). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V
3dg1627af.pdf
2SC1627AF(3DG1627AF) NPN /SILICON NPN TRANSISTOR : Purpose: Driver stage amplifier and voltage amplifier. 3035W 2SA817AF(3CG817AF) Features: Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(3CG817AF). /Absolute maximum ratings(
3dg160.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG160NPN Silicon High Reverse Voltage High Frequency Low Power TransistorFeatures: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DK29 | 2T665A9 | 2T3117A | 2N3013 | 3CA138 | 2SD998 | 2N6621
History: 3DK29 | 2T665A9 | 2T3117A | 2N3013 | 3CA138 | 2SD998 | 2N6621
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