3DG2001 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG2001
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO92
3DG2001 Transistor Equivalent Substitute - Cross-Reference Search
3DG2001 Datasheet (PDF)
3dg2001.pdf
2SC2001(3DG2001) NPN /SILICON NPN TRANSISTOR :/Purpose: Output stage of portable radio and cassette type tape recorder, general purpose applications. :, h /Features: High total power dissipation, FElow V and high h . CE(sat) FE/Absolut
3dg2053.pdf
3DG2053(2SC2053) NPN PCM TA=25 600 mW ICM 300 mA Tjm 135 Tstg -55~135 V(BR)CBO ICB=1mA 40 V V(BR)CEO ICE=10mA 17 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=15V 20 A IEBO VCB=3V 20 A VCE=5V hFE 50 IC=10mA 1. E
3dg2060.pdf
2SC2060(3DG2060) NPN /SILICON NPN TRANSISTOR : 12W Purpose:12W low frequency amplifiers. :,, 2SA934(3CG934) Features: High P , low collector saturation voltage, complementary pair with 2SA934(3CG934). C/Absolute maximum ratings(Ta=25)
3dg2058s.pdf
2SC2058S(3DG2058S) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 25 V CEO V 5.0 V EBO I 50 mA C P 300 mW C T 150 j T -55150 stg /Electrical characteristics(
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
