All Transistors. 3DG210 Datasheet

 

3DG210 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG210

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

3DG210 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG210 Datasheet (PDF)

1.1. 3dg210.pdf Size:118K _china

3DG210

3DG210 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C PCM 1000 mW 极 ICM 1000 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥80 ≥100 ≥120 V V(BR)CEO ICE=0.1mA ≥60 ≥80 ≥100 V V(BR)EBO IEB=0.1mA ≥6.0 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤1.0 μA 流 参 IEBO VEB=2V ≤0.1 μA 数 VBEsat

1.2. 3dg2102.pdf Size:115K _china

3DG210

3DG2102 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C PCM TA=25℃ 1000 mW 极 ICM 1000 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 ≥80 ≥100 V V(BR)CEO ICE=0.1mA ≥80 ≥100 ≥120 V V(BR)EBO IEB=0.1mA ≥6 V 直 ICBO VCE=10V ≤0.1 μA 流 参 VBEsat ≤1.2 Ic=500mA V 数 IB=50mA VCEsat

 5.1. 3dg2120.pdf Size:262K _china

3DG210
3DG210

2SC2120(3DG2120) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大。/Purpose: Audio frequency power amplifier applications. 特点:高 h ,可得 1W 输出,与 2SA950(3CG950)互补。/Features: High h ,1 watts amplifier FE FE, applications, complementary pair with 2SA950(3CG950). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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