All Transistors. 3DG2383T Datasheet

 

3DG2383T Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2383T

SMD Transistor Code: H83R_H83O_H83Y

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

3DG2383T Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2383T Datasheet (PDF)

1.1. 3dg2383t.pdf Size:257K _china

3DG2383T
3DG2383T

2SC2383T(3DG2383T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电帧输出,伴音输出。 Purpose: Color TV class B sound output applications. 特点:V 高,可与 2SA1013T(3CG1013T)互补。 CEO Features: High V , complementary pair with 2SA1013T(3CG1013T). CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit

3.1. 3dg2383.pdf Size:228K _china

3DG2383T
3DG2383T

2SC2383(3DG2383) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电帧输出,伴音输出。 Purpose: Color TV class B sound output applications. 特点:V 高,可与 2SA1013(3CG1013)互补。 CEO Features: High V , complementary pair with 2SA1013(3CG1013). CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 160

 5.1. 3dg2308.pdf Size:177K _china

3DG2383T
3DG2383T

2SC2308(3DG2308) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低频放大,与 2SA1030(3CG1030)互补。 Purpose: Low frequency amplifier, complementary pair with 2SA1030(3CG1030). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 100 mA C I -100 mA E P 200 mW C T

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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