3DG2668 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG2668
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 550 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
3DG2668 Transistor Equivalent Substitute - Cross-Reference Search
3DG2668 Datasheet (PDF)
3dg2668.pdf
2SC2668(3DG2668) NPN /SILICON NPN TRANSISTOR :,,, Purpose: High frequency amplifier, FM,RF,MIX IF amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25)
3dg2655.pdf
2SC2655(3DG2655) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, 2SA1020(3CG1020)/Features: Low saturation voltage, high speed switching time, complementary to 2SA1020(3CG1020). /Absolute maximum ratings(Ta=25)
3dg2610.pdf
2SC2610(3DG2610) NPN /SILICON NPN TRANSISTOR :, Purpose: High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 800 mW CT 150 j T -55150 stg
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
