All Transistors. 3DG2712 Datasheet

 

3DG2712 Datasheet and Replacement


   Type Designator: 3DG2712
   SMD Transistor Code: HLO_HLY_HLG_HLL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
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3DG2712 Datasheet (PDF)

 ..1. Size:297K  foshan
 3dg2712.pdf pdf_icon

3DG2712

2SC2712(3DG2712) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency general purpose amplifier applications. Features: High voltage, high current, high h , low noise, excellent h linearity. FE FE/Absolute maximum ratings(Ta=25)

 8.1. Size:223K  foshan
 3dg2710.pdf pdf_icon

3DG2712

2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR : Purpose: Audio amplifier applications. : , 2SA1150(3CG1150) Features: High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 35 V CBO

 8.2. Size:211K  foshan
 3dg2717.pdf pdf_icon

3DG2712

2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I

 8.3. Size:234K  foshan
 3dg2717m.pdf pdf_icon

3DG2712

2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO

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History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | MM4021

Keywords - 3DG2712 transistor datasheet

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