All Transistors. 3DG2909 Datasheet

 

3DG2909 Datasheet and Replacement


   Type Designator: 3DG2909
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
 

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3DG2909 Datasheet (PDF)

 ..1. Size:233K  foshan
 3dg2909.pdf pdf_icon

3DG2909

2SC2909(3DG2909) NPN /SILICON NPN TRANSISTOR : 60 Purpose: High voltage switching. AF 60W pre-driver applications. :hFE Features: High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. /Absolu

 9.1. Size:285K  lzg
 3dg2999.pdf pdf_icon

3DG2909

2SC2999(3DG2999) NPN /SILICON NPN TRANSISTOR : Purpose: RF,HF Amplifier applications. : f TFeatures: High f small C . T re/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30

Datasheet: 3DG2786 , 3DG2812 , 3DG2839 , 3DG2873 , 3DG2878 , 3DG2881 , 3DG2881A , 3DG2884 , TIP127 , 3DG2999 , 3DG302 , 3DG3020 , 3DG3020A1 , 3DG3130 , 3DG3137 , 3DG3142 , 3DG3326 .

History: ACY12 | BCY49 | ACY13 | AT41586 | 2SD433 | SML2181

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