All Transistors. 3DG2909 Datasheet

 

3DG2909 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG2909
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 3DG2909 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG2909 Datasheet (PDF)

 ..1. Size:233K  foshan
 3dg2909.pdf

3DG2909 3DG2909

2SC2909(3DG2909) NPN /SILICON NPN TRANSISTOR : 60 Purpose: High voltage switching. AF 60W pre-driver applications. :hFE Features: High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. /Absolu

 9.1. Size:285K  lzg
 3dg2999.pdf

3DG2909 3DG2909

2SC2999(3DG2999) NPN /SILICON NPN TRANSISTOR : Purpose: RF,HF Amplifier applications. : f TFeatures: High f small C . T re/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2970

 

 
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