All Transistors. 3DG2999 Datasheet

 

3DG2999 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2999

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 450 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92S

3DG2999 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2999 Datasheet (PDF)

1.1. 3dg2999.pdf Size:285K _china

3DG2999
3DG2999

2SC2999(3DG2999) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于射频,高频放大。 Purpose: RF,HF Amplifier applications. 特点:特征频率 f 高,反向传输电容小。 T Features: High f ,small C . T re 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30

5.1. 3dg2909.pdf Size:233K _china

3DG2999
3DG2999

2SC2909(3DG2909) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 高压开关,60 瓦音频前置放大。 Purpose: High voltage switching. AF 60W pre-driver applications. 特点:击穿电压高,hFE 线性好,共基极输出电容小,开关速度快。 Features: High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. 极限参数/Absolu

Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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