All Transistors. 3DG2999 Datasheet

 

3DG2999 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG2999
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92S

 3DG2999 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG2999 Datasheet (PDF)

 ..1. Size:285K  lzg
 3dg2999.pdf

3DG2999 3DG2999

2SC2999(3DG2999) NPN /SILICON NPN TRANSISTOR : Purpose: RF,HF Amplifier applications. : f TFeatures: High f small C . T re/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30

 9.1. Size:233K  foshan
 3dg2909.pdf

3DG2999 3DG2999

2SC2909(3DG2909) NPN /SILICON NPN TRANSISTOR : 60 Purpose: High voltage switching. AF 60W pre-driver applications. :hFE Features: High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. /Absolu

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N2997

 

 
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