All Transistors. 3DG2999 Datasheet

 

3DG2999 Datasheet and Replacement


   Type Designator: 3DG2999
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92S
 

 3DG2999 Substitution

   - BJT ⓘ Cross-Reference Search

   

3DG2999 Datasheet (PDF)

 ..1. Size:285K  lzg
 3dg2999.pdf pdf_icon

3DG2999

2SC2999(3DG2999) NPN /SILICON NPN TRANSISTOR : Purpose: RF,HF Amplifier applications. : f TFeatures: High f small C . T re/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30

 9.1. Size:233K  foshan
 3dg2909.pdf pdf_icon

3DG2999

2SC2909(3DG2909) NPN /SILICON NPN TRANSISTOR : 60 Purpose: High voltage switching. AF 60W pre-driver applications. :hFE Features: High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. /Absolu

Datasheet: 3DG2812 , 3DG2839 , 3DG2873 , 3DG2878 , 3DG2881 , 3DG2881A , 3DG2884 , 3DG2909 , 13005 , 3DG302 , 3DG3020 , 3DG3020A1 , 3DG3130 , 3DG3137 , 3DG3142 , 3DG3326 , 3DG3330 .

History: 2SC852 | KT667A9 | MSD602RT1 | FB3424 | ME1120 | UNR2217 | 2SC4160

Keywords - 3DG2999 transistor datasheet

 3DG2999 cross reference
 3DG2999 equivalent finder
 3DG2999 lookup
 3DG2999 substitution
 3DG2999 replacement

 

 
Back to Top

 


 
.