All Transistors. 3DG2999 Datasheet

 

3DG2999 Datasheet and Replacement


   Type Designator: 3DG2999
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92S
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3DG2999 Datasheet (PDF)

 ..1. Size:285K  lzg
 3dg2999.pdf pdf_icon

3DG2999

2SC2999(3DG2999) NPN /SILICON NPN TRANSISTOR : Purpose: RF,HF Amplifier applications. : f TFeatures: High f small C . T re/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30

 9.1. Size:233K  foshan
 3dg2909.pdf pdf_icon

3DG2999

2SC2909(3DG2909) NPN /SILICON NPN TRANSISTOR : 60 Purpose: High voltage switching. AF 60W pre-driver applications. :hFE Features: High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. /Absolu

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | 2SC3110 | 2SB1014 | 2SD2115S | FPQ3724 | 2N398A

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