3DG2999 Specs and Replacement
Type Designator: 3DG2999
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92S
3DG2999 Substitution
- BJT ⓘ Cross-Reference Search
3DG2999 datasheet
2SC2999(3DG2999) NPN /SILICON NPN TRANSISTOR Purpose RF,HF Amplifier applications. f T Features High f small C . T re /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30 ... See More ⇒
2SC2909(3DG2909) NPN /SILICON NPN TRANSISTOR 60 Purpose High voltage switching. AF 60W pre-driver applications. hFE Features High breakdown voltage.excellent linearity of hFE and small Cob,fast switching speed. /Absolu... See More ⇒
Detailed specifications: 3DG2812, 3DG2839, 3DG2873, 3DG2878, 3DG2881, 3DG2881A, 3DG2884, 3DG2909, C3198, 3DG302, 3DG3020, 3DG3020A1, 3DG3130, 3DG3137, 3DG3142, 3DG3326, 3DG3330
Keywords - 3DG2999 pdf specs
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