3DG3478 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG3478
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2.6 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: TO92
3DG3478 Transistor Equivalent Substitute - Cross-Reference Search
3DG3478 Datasheet (PDF)
3dg3478.pdf
2SC3478(3DG3478) NPN /SILION NPN TRANSISTOR : Purpose: General purpose amplifier applications requiring high breakdown voltages. : , 2SA1376(3CG1376) Features: High breakdown voltage, good h linearity, complementary to 2SA1376(3CG1376). FE/Absolute maxim
3dg3439.pdf
3DG3439(2N3439) NPN PCM TA=25 800 mW ICM 1000 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=1mA 450 V V(BR)CEO ICE=1mA 350 V V(BR)EBO IEB=1mA 7.0 V ICBO VCB=350V 20 A ICEO VCB=300V 20 A IEBO VEB=6V 20 A IC=50mA VCEsat 0.5 V IB=4mA VCE=10V hFE
3dg3440.pdf
3DG3440(2N3440) NPN PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 300 V V(BR)CEO ICE=2mA 250 V V(BR)EBO IEB=1mA 7.0 V ICBO VCB=300V 5.0 A ICEO VCE=200V 2.0 A IEBO VEB=7V 10 A VBEsat 1.3 IC=50mA V IB=4mA VCEs
3dg3402.pdf
3DG3402(2SC3402) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=10A 50 V V(BR)CEO ICE=100A 50 V V(BR)EBO IEB=10A 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 330 A IC=10mA VCEsat 0.3 V I
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
