3DG3779 Specs and Replacement
Type Designator: 3DG3779
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
3DG3779 Substitution
- BJT ⓘ Cross-Reference Search
3DG3779 datasheet
2SC3779(3DG3779) NPN /SILICON NPN TRANSISTOR Applications UHF low-noise amplifiers, wide-band amplifiers. Features Small noise figure, high power gain, high f . T /Absolute maximum ratings(Ta=25 ) Symbol Ra... See More ⇒
Detailed specifications: 3DG3357, 3DG3399, 3DG3402, 3DG3439, 3DG3440, 3DG3478, 3DG3545, 3DG3648, BC639, 3DG380TM, 3DG3838K, 3DG383TM, 3DG3841, 3DG388ATM, 3DG3904, 3DG4, 3DG4003
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