All Transistors. 3DG3779 Datasheet

 

3DG3779 Datasheet and Replacement


   Type Designator: 3DG3779
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 3DG3779 Substitution

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3DG3779 Datasheet (PDF)

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3DG3779

2SC3779(3DG3779) NPN /SILICON NPN TRANSISTOR : Applications: UHF low-noise amplifiers, wide-band amplifiers. : Features:Small noise figure, high power gain, high f . T/Absolute maximum ratings(Ta=25) Symbol Ra

Datasheet: 3DG3357 , 3DG3399 , 3DG3402 , 3DG3439 , 3DG3440 , 3DG3478 , 3DG3545 , 3DG3648 , 2SA1015 , 3DG380TM , 3DG3838K , 3DG383TM , 3DG3841 , 3DG388ATM , 3DG3904 , 3DG4 , 3DG4003 .

History: 2N6058

Keywords - 3DG3779 transistor datasheet

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