All Transistors. 3DG3779 Datasheet

 

3DG3779 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG3779
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 3DG3779 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG3779 Datasheet (PDF)

 ..1. Size:180K  foshan
 3dg3779.pdf

3DG3779 3DG3779

2SC3779(3DG3779) NPN /SILICON NPN TRANSISTOR : Applications: UHF low-noise amplifiers, wide-band amplifiers. : Features:Small noise figure, high power gain, high f . T/Absolute maximum ratings(Ta=25) Symbol Ra

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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