3DG5088 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG5088
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO92
3DG5088 Transistor Equivalent Substitute - Cross-Reference Search
3DG5088 Datasheet (PDF)
..1. Size:303K lzg
3dg5088.pdf
3dg5088.pdf
2N5088(3DG5088) NPN /SILICON NPN TRANSISTOR 1uA50uA Purpose:This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1A to 50A. /Absolute maximum ratings(Ta=25) Symbol Rating
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2909