3DG5088 Specs and Replacement
Type Designator: 3DG5088
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TO92
3DG5088 Substitution
- BJT ⓘ Cross-Reference Search
3DG5088 datasheet
2N5088(3DG5088) NPN /SILICON NPN TRANSISTOR 1uA 50uA Purpose This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1 A to 50 A. /Absolute maximum ratings(Ta=25 ) Symbol Rating... See More ⇒
Detailed specifications: 3DG4081, 3DG4081W, 3DG4097, 3DG4115S, 3DG4155A, 3DG42, 3DG4401, 3DG458, D667, 3DG512B, 3DG512C, 3DG531, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 3DG5551
Keywords - 3DG5088 pdf specs
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