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3DG5088 Specs and Replacement

Type Designator: 3DG5088

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO92

 3DG5088 Substitution

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3DG5088 datasheet

 ..1. Size:303K  lzg

3dg5088.pdf pdf_icon

3DG5088

2N5088(3DG5088) NPN /SILICON NPN TRANSISTOR 1uA 50uA Purpose This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1 A to 50 A. /Absolute maximum ratings(Ta=25 ) Symbol Rating... See More ⇒

Detailed specifications: 3DG4081, 3DG4081W, 3DG4097, 3DG4115S, 3DG4155A, 3DG42, 3DG4401, 3DG458, D667, 3DG512B, 3DG512C, 3DG531, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 3DG5551

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