3DG512B Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG512B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO18
3DG512B Transistor Equivalent Substitute - Cross-Reference Search
3DG512B Datasheet (PDF)
..1. Size:103K china
3dg512b.pdf
3dg512b.pdf
3DG512B NPN PCM 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 130 V V(BR)CEO ICE=0.1mA 90 V V(BR)EBO IEB=0.1mA 8 V ICBO VCB=30V 1 A ICEO VCE=30V 1 A VBEsat 1.3 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V hFE 60 IC=100mA 1.
8.1. Size:101K china
3dg512c.pdf
3dg512c.pdf
3DG512C NPN PCM TA=25 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 140 V V(BR)CEO ICE=0.1mA 140 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.3 VCE=2V hFE 50 IC=500mA 1. E
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
