All Transistors. 3DG512B Datasheet

 

3DG512B Datasheet and Replacement


   Type Designator: 3DG512B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO18
 

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3DG512B Datasheet (PDF)

 ..1. Size:103K  china
 3dg512b.pdf pdf_icon

3DG512B

3DG512B NPN PCM 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 130 V V(BR)CEO ICE=0.1mA 90 V V(BR)EBO IEB=0.1mA 8 V ICBO VCB=30V 1 A ICEO VCE=30V 1 A VBEsat 1.3 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V hFE 60 IC=100mA 1.

 8.1. Size:101K  china
 3dg512c.pdf pdf_icon

3DG512B

3DG512C NPN PCM TA=25 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 140 V V(BR)CEO ICE=0.1mA 140 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.3 VCE=2V hFE 50 IC=500mA 1. E

Datasheet: 3DG4081W , 3DG4097 , 3DG4115S , 3DG4155A , 3DG42 , 3DG4401 , 3DG458 , 3DG5088 , BD777 , 3DG512C , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , 3DG5770 .

Keywords - 3DG512B transistor datasheet

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