3DG512B Specs and Replacement
Type Designator: 3DG512B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO18
3DG512B Substitution
- BJT ⓘ Cross-Reference Search
3DG512B datasheet
3DG512B NPN PCM 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 130 V V(BR)CEO ICE=0.1mA 90 V V(BR)EBO IEB=0.1mA 8 V ICBO VCB=30V 1 A ICEO VCE=30V 1 A VBEsat 1.3 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V hFE 60 IC=100mA 1.... See More ⇒
3DG512C NPN PCM TA=25 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 140 V V(BR)CEO ICE=0.1mA 140 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.3 VCE=2V hFE 50 IC=500mA 1. E ... See More ⇒
Detailed specifications: 3DG4081W, 3DG4097, 3DG4115S, 3DG4155A, 3DG42, 3DG4401, 3DG458, 3DG5088, BD333, 3DG512C, 3DG531, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 3DG5551, 3DG5770
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