All Transistors. 3DG512C Datasheet

 

3DG512C Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG512C

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO18

3DG512C Transistor Equivalent Substitute - Cross-Reference Search

 

3DG512C Datasheet (PDF)

1.1. 3dg512c.pdf Size:101K _china

3DG512C

3DG512C 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 1 W 极 限 ICM 2 A 值 Tjm 175 ℃ V(BR)CBO ICB=0.1mA ≥140 V V(BR)CEO ICE=0.1mA ≥140 V ICBO VCB=30V ≤1.0 μA 直 ICEO VCE=30V ≤1.0 μA 流 参 VBEsat ≤0.5 IC=500mA V 数 IB=50mA VCEsat ≤1.3 VCE=2V hFE ≥50 IC=500mA 外 引 1. E 发射极

4.1. 3dg512b.pdf Size:103K _china

3DG512C

3DG512B 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM 1 W 极 限 ICM 2 A 值 Tjm 175 ℃ V(BR)CBO ICB=0.1mA ≥130 V V(BR)CEO ICE=0.1mA ≥90 V V(BR)EBO IEB=0.1mA ≥8 V 直 ICBO VCB=30V ≤1 μA 流 ICEO VCE=30V ≤1 μA 参 VBEsat ≤1.3 IC=500mA 数 V IB=50mA VCEsat ≤0.5 VCE=2V hFE ≥60 IC=100mA 外 引 1.

 

Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .

 
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