3DG512C Specs and Replacement
Type Designator: 3DG512C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
3DG512C Substitution
3DG512C detailed specifications
3dg512c.pdf
3DG512C NPN PCM TA=25 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 140 V V(BR)CEO ICE=0.1mA 140 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.3 VCE=2V hFE 50 IC=500mA 1. E ... See More ⇒
3dg512b.pdf
3DG512B NPN PCM 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 130 V V(BR)CEO ICE=0.1mA 90 V V(BR)EBO IEB=0.1mA 8 V ICBO VCB=30V 1 A ICEO VCE=30V 1 A VBEsat 1.3 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V hFE 60 IC=100mA 1.... See More ⇒
Detailed specifications: 3DG4097 , 3DG4115S , 3DG4155A , 3DG42 , 3DG4401 , 3DG458 , 3DG5088 , 3DG512B , BDT88 , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , 3DG5770 , 3DG6 .
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