All Transistors. 3DG512C Datasheet

 

3DG512C Datasheet and Replacement


   Type Designator: 3DG512C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO18
 

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3DG512C Datasheet (PDF)

 ..1. Size:101K  china
 3dg512c.pdf pdf_icon

3DG512C

3DG512C NPN PCM TA=25 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 140 V V(BR)CEO ICE=0.1mA 140 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.3 VCE=2V hFE 50 IC=500mA 1. E

 8.1. Size:103K  china
 3dg512b.pdf pdf_icon

3DG512C

3DG512B NPN PCM 1 W ICM 2 A Tjm 175 V(BR)CBO ICB=0.1mA 130 V V(BR)CEO ICE=0.1mA 90 V V(BR)EBO IEB=0.1mA 8 V ICBO VCB=30V 1 A ICEO VCE=30V 1 A VBEsat 1.3 IC=500mA V IB=50mA VCEsat 0.5 VCE=2V hFE 60 IC=100mA 1.

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

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