3DG531 Specs and Replacement
Type Designator: 3DG531
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO18
3DG531 Substitution
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3DG531 datasheet
3DG531(FG531) NPN A B C D PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 40 50 V V(BR)CEO ICE=1mA 25 35 40 V V(BR)EBO IEB=1mA 3.0 4.0 V ICEO VCE=20V 0.5 mA IC=100mA VCEsat 0.5 V IB=10mA VCE=10V hFE 20 IC=5... See More ⇒
2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl... See More ⇒
2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR Purpose Small signal general purpose amplifier applications. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3DG536M 40 V CBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBO I 10... See More ⇒
Detailed specifications: 3DG4115S, 3DG4155A, 3DG42, 3DG4401, 3DG458, 3DG5088, 3DG512B, 3DG512C, BD222, 3DG535, 3DG536KM, 3DG536M, 3DG5401, 3DG5551, 3DG5770, 3DG6, 3DG639
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