All Transistors. 3DG536M Datasheet

 

3DG536M Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG536M

SMD Transistor Code: H53D_H53E_H53F_H53G_H53H

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

3DG536M Transistor Equivalent Substitute - Cross-Reference Search

 

3DG536M Datasheet (PDF)

1.1. 3dg536m.pdf Size:219K _china

3DG536M
3DG536M

2SC536M(3DG536M) 2SC536KM(3DG536KM) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于小信号一般放大电路。 Purpose: Small signal general purpose amplifier applications. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit 3DG536M 40 V CBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBO I 10

4.1. br3dg536k.pdf Size:620K _update

3DG536M
3DG536M

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 高电流和宽阔的安全工作区。 Large current capacity and wide ASO 用途 / Applications 用于小信号一般放大电路。 Small signal general purpose amplifier appl

4.2. 3dg536km.pdf Size:219K _china

3DG536M
3DG536M

2SC536M(3DG536M) 2SC536KM(3DG536KM) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于小信号一般放大电路。 Purpose: Small signal general purpose amplifier applications. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit 3DG536M 40 V CBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBO I 10

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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