All Transistors. 3DG536M Datasheet

 

3DG536M Datasheet and Replacement


   Type Designator: 3DG536M
   SMD Transistor Code: H53D_H53E_H53F_H53G_H53H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
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3DG536M Datasheet (PDF)

 ..1. Size:219K  lzg
 3dg536m.pdf pdf_icon

3DG536M

2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR : Purpose: Small signal general purpose amplifier applications. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit 3DG536M 40 VCBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBOI 10

 8.1. Size:620K  blue-rocket-elect
 br3dg536k.pdf pdf_icon

3DG536M

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl

 8.2. Size:219K  lzg
 3dg536km.pdf pdf_icon

3DG536M

2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR : Purpose: Small signal general purpose amplifier applications. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit 3DG536M 40 VCBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBOI 10

 9.1. Size:109K  china
 3dg531.pdf pdf_icon

3DG536M

3DG531(FG531) NPN A B C D PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 40 50 V V(BR)CEO ICE=1mA 25 35 40 V V(BR)EBO IEB=1mA 3.0 4.0 V ICEO VCE=20V 0.5 mA IC=100mA VCEsat 0.5 V IB=10mA VCE=10V hFE 20 IC=5

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Keywords - 3DG536M transistor datasheet

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