All Transistors. 3DG5401 Datasheet

 

3DG5401 Datasheet and Replacement


   Type Designator: 3DG5401
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92
 

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3DG5401 Datasheet (PDF)

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3DG5401

2N5401(3CG5401) PNP /SILICON PNP TRANSISTOR :/Purpose: General purpose high voltage amplifier :, 2N5551(3DG5551)/Features: High voltages, complementary pair.With 2N5551(3DG5551) /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -180 V CB

Datasheet: 3DG458 , 3DG5088 , 3DG512B , 3DG512C , 3DG531 , 3DG535 , 3DG536KM , 3DG536M , 2N5551 , 3DG5551 , 3DG5770 , 3DG6 , 3DG639 , 3DG6520 , 3DG718A , 3DG720 , 3DG752TM .

History: TD13005 | 3CA1370 | DTC123YKAFRA | 2SC979 | CTP1033 | MP506 | 2SA505O

Keywords - 3DG5401 transistor datasheet

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