3DG5401 Specs and Replacement
Type Designator: 3DG5401
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
3DG5401 Substitution
- BJT ⓘ Cross-Reference Search
3DG5401 datasheet
2N5401(3CG5401) PNP /SILICON PNP TRANSISTOR /Purpose General purpose high voltage amplifier , 2N5551(3DG5551) /Features High voltages, complementary pair.With 2N5551(3DG5551) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -180 V CB... See More ⇒
Detailed specifications: 3DG458, 3DG5088, 3DG512B, 3DG512C, 3DG531, 3DG535, 3DG536KM, 3DG536M, BD139, 3DG5551, 3DG5770, 3DG6, 3DG639, 3DG6520, 3DG718A, 3DG720, 3DG752TM
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