All Transistors. 3DG5401 Datasheet

 

3DG5401 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG5401
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO92

 3DG5401 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG5401 Datasheet (PDF)

 ..1. Size:245K  lzg
 3dg5401.pdf

3DG5401 3DG5401

2N5401(3CG5401) PNP /SILICON PNP TRANSISTOR :/Purpose: General purpose high voltage amplifier :, 2N5551(3DG5551)/Features: High voltages, complementary pair.With 2N5551(3DG5551) /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -180 V CB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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