All Transistors. 3DG5401 Datasheet

 

3DG5401 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG5401

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

3DG5401 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG5401 Datasheet (PDF)

1.1. 3dg5401.pdf Size:245K _china

3DG5401
3DG5401

2N5401(3CG5401) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于普通高压放大。/Purpose: General purpose high voltage amplifier。 特点:击穿电压高,可与 2N5551(3DG5551)互补。/Features: High voltages, complementary pair.With 2N5551(3DG5551)。 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -180 V CB

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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