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3DG718A Specs and Replacement


   Type Designator: 3DG718A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: TO18

 3DG718A Transistor Equivalent Substitute - Cross-Reference Search

   

3DG718A detailed specifications

 ..1. Size:110K  china
 3dg718a.pdf pdf_icon

3DG718A

3DG718A(2N718A) NPN PCM TA=25 0.5 W ICM 600 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 75 V V(BR)CEO ICE=0.1mA 32 V V(BR)EBO IEB=0.1mA 4 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.01 A IEBO VEB=1.5V 0.1 A VBEsat 1.5 IC=0.1A V ... See More ⇒

Detailed specifications: 3DG536KM , 3DG536M , 3DG5401 , 3DG5551 , 3DG5770 , 3DG6 , 3DG639 , 3DG6520 , 2N5401 , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 .

History: KT716V

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