3DG718A Datasheet. Specs and Replacement

Type Designator: 3DG718A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3

Noise Figure, dB: -

Package: TO18

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3DG718A datasheet

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3DG718A

3DG718A(2N718A) NPN PCM TA=25 0.5 W ICM 600 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 75 V V(BR)CEO ICE=0.1mA 32 V V(BR)EBO IEB=0.1mA 4 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.01 A IEBO VEB=1.5V 0.1 A VBEsat 1.5 IC=0.1A V ... See More ⇒

Detailed specifications: 3DG536KM, 3DG536M, 3DG5401, 3DG5551, 3DG5770, 3DG6, 3DG639, 3DG6520, 2N5401, 3DG720, 3DG752TM, 3DG8, 3DG8050, 3DG8050A, 3DG8050M, 3DG8051, 3DG817

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