3DG752TM Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG752TM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
3DG752TM Transistor Equivalent Substitute - Cross-Reference Search
3DG752TM Datasheet (PDF)
..1. Size:205K lzg
3dg752tm.pdf
3dg752tm.pdf
2SC752TM(3DG752TM) NPN /SILICON NPN TRANSISTOR :/Purpose: Ultra high speed switching applications. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit VCBO 40 V V 15 V CEO V 5.0 V EBO I 200 mA C I 40 mA B P 400 mW C T 150 j T -55150 stg /
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DG6
