3DG752TM Specs and Replacement
Type Designator: 3DG752TM
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
3DG752TM Substitution
- BJT ⓘ Cross-Reference Search
3DG752TM datasheet
2SC752TM(3DG752TM) NPN /SILICON NPN TRANSISTOR /Purpose Ultra high speed switching applications. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 40 V V 15 V CEO V 5.0 V EBO I 200 mA C I 40 mA B P 400 mW C T 150 j T -55 150 stg /... See More ⇒
Detailed specifications: 3DG5401, 3DG5551, 3DG5770, 3DG6, 3DG639, 3DG6520, 3DG718A, 3DG720, BC548, 3DG8, 3DG8050, 3DG8050A, 3DG8050M, 3DG8051, 3DG817, 3DG82, 3DG847B
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