3DG8051 Specs and Replacement
Type Designator: 3DG8051
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92L
3DG8051 Transistor Equivalent Substitute - Cross-Reference Search
3DG8051 detailed specifications
3dg8051.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3DG8051 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3CG8551 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Vol... See More ⇒
3dg8050.pdf
3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB 0.1mA 30 V V(BR)CEO ICE 0.1mA 25 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20 100 IC=0.... See More ⇒
3dg8050m.pdf
S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR /Purpose Power amplifier applications. S8550M(3CG8550M) /Features Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C ... See More ⇒
Detailed specifications: 3DG6520 , 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 2SA1943 , 3DG817 , 3DG82 , 3DG847B , 3DG9013 , 3DG9014 , 3DG930 , 3DG945 , 3DG945M .
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