All Transistors. 3DG817 Datasheet

 

3DG817 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG817

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

3DG817 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG817 Datasheet (PDF)

1.1. 3dg817.pdf Size:91K _china

3DG817

锦州辽晶电子科技有限公司 LJ2015-12 3DG817 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 P T =25℃ 250 mW CM A I 500 mA C 极 限 I 1000 mA CM 值 T 150 ℃ jm T -55~150 ℃ stg V I =0.1mA ≥50 V (BR)CBO CB V I =10mA ≥45 V (BR)CEO CE V I =0.1mA ≥5.0 V (BR)EBO EB I V =20V ≤0.1 μA 直 CBO CB 流 I V =5V ≤0.1 μA EBO EB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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