3DG817 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG817
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
3DG817 Transistor Equivalent Substitute - Cross-Reference Search
3DG817 Datasheet (PDF)
..1. Size:91K china
3dg817.pdf
3dg817.pdf
LJ2015-123DG817 NPN P T =25 250 mWCM AI 500 mAC I 1000 mACMT 150 jmT -55~150 stgV I =0.1mA 50 V(BR)CBO CBV I =10mA 45 V(BR)CEO CEV I =0.1mA 5.0 V(BR)EBO EBI V =20V 0.1 A CBO CB I V =5V 0.1 AEBO EB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
