All Transistors. 3DG817 Datasheet

 

3DG817 Datasheet and Replacement


   Type Designator: 3DG817
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT23
 

 3DG817 Substitution

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3DG817 Datasheet (PDF)

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3DG817

LJ2015-123DG817 NPN P T =25 250 mWCM AI 500 mAC I 1000 mACMT 150 jmT -55~150 stgV I =0.1mA 50 V(BR)CBO CBV I =10mA 45 V(BR)CEO CEV I =0.1mA 5.0 V(BR)EBO EBI V =20V 0.1 A CBO CB I V =5V 0.1 AEBO EB

Datasheet: 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 2SA1943 , 3DG82 , 3DG847B , 3DG9013 , 3DG9014 , 3DG930 , 3DG945 , 3DG945M , 3DK001 .

History: 2SC1243 | NSP598 | GI3710 | FM708 | NR461HE | KT208M | BFY68A

Keywords - 3DG817 transistor datasheet

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