3DG817 Specs and Replacement
Type Designator: 3DG817
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT23
3DG817 Substitution
- BJT ⓘ Cross-Reference Search
3DG817 datasheet
LJ2015-12 3DG817 NPN P T =25 250 mW CM A I 500 mA C I 1000 mA CM T 150 jm T -55 150 stg V I =0.1mA 50 V (BR)CBO CB V I =10mA 45 V (BR)CEO CE V I =0.1mA 5.0 V (BR)EBO EB I V =20V 0.1 A CBO CB I V =5V 0.1 A EBO EB... See More ⇒
Detailed specifications: 3DG718A , 3DG720 , 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , TIP122 , 3DG82 , 3DG847B , 3DG9013 , 3DG9014 , 3DG930 , 3DG945 , 3DG945M , 3DK001 .
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