All Transistors. 3DG847B Datasheet

 

3DG847B Datasheet and Replacement


   Type Designator: 3DG847B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.33 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92 SOT23 TO18
 

 3DG847B Substitution

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3DG847B Datasheet (PDF)

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3DG847B

3DG847B(BC847B) NPN PCM TA=25 330 mW ICM 200 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB0.01mA 50 V V(BR)CEO ICE10mA 45 V V(BR)EBO IEB0.001mA 6.0 V ICBO VCB=40V 15 mA IEBO VEB=5.0V 1.0 mA VBEsat 0.77 V IC=100mA IB=5mA VCEsat

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BC488-18 | BC490-5 | 2SD1388 | SD1477 | BC529

Keywords - 3DG847B transistor datasheet

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