3DG847B Specs and Replacement
Type Designator: 3DG847B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
3DG847B Substitution
- BJT ⓘ Cross-Reference Search
3DG847B datasheet
Detailed specifications: 3DG752TM , 3DG8 , 3DG8050 , 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 , 3DG82 , 13007 , 3DG9013 , 3DG9014 , 3DG930 , 3DG945 , 3DG945M , 3DK001 , 3DK002 , 3DK010 .
History: BDY37
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