3DG9013 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG9013
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 64
Noise Figure, dB: -
Package: TO92
3DG9013 Transistor Equivalent Substitute - Cross-Reference Search
3DG9013 Datasheet (PDF)
3dg9013.pdf
NPN NPN EPITAXIAL SILICON TRANSISTOR R3DG9013 MAIN CHARACTERISTICS Package I 500mA CV 20V CEOP 625mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92
3dg9013.pdf
9013(3DG9013) NPN /SILICON NPN TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , 9012(3CG9012) C C FEFeatures: High P and I , excellent h linearity, complementary pair with 9012(3CG9012). C C FE/Absolute maximum ratings(Ta=25)
3dg9014.pdf
S9014(3DG9014) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency, low noise amplifier. :P ,h , S9015(3CG9015) C FEFeatures: High P and h excellent h linearity, complementary pair with S9015(3CG9015). C FE FE/Absolute maximum ratings(Ta=25)
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
