3DG930 Specs and Replacement
Type Designator: 3DG930
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 170 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
3DG930 Substitution
- BJT ⓘ Cross-Reference Search
3DG930 datasheet
Detailed specifications: 3DG8050A, 3DG8050M, 3DG8051, 3DG817, 3DG82, 3DG847B, 3DG9013, 3DG9014, D882, 3DG945, 3DG945M, 3DK001, 3DK002, 3DK010, 3DK023F, 3DK024E, 3DK030
Keywords - 3DG930 pdf specs
3DG930 cross reference
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