All Transistors. 3DG930 Datasheet

 

3DG930 Datasheet and Replacement


   Type Designator: 3DG930
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 170 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 3DG930 Substitution

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3DG930 Datasheet (PDF)

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3DG930

2SC930(3DG930) NPN /SILICON NPN TRANSISTOR :, Purpose: RF amplifier, mixer OSC, converter, and IF amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 5.0 V EBO I 30 mA C P 250 mW C T 150 j T -55

Datasheet: 3DG8050A , 3DG8050M , 3DG8051 , 3DG817 , 3DG82 , 3DG847B , 3DG9013 , 3DG9014 , A1941 , 3DG945 , 3DG945M , 3DK001 , 3DK002 , 3DK010 , 3DK023F , 3DK024E , 3DK030 .

History: 2N5978 | 2SC784R | D40PU4 | 2SC2258R | BDX96 | BC857BS | BF109

Keywords - 3DG930 transistor datasheet

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