All Transistors. 3DG930 Datasheet

 

3DG930 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG930

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 170 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

3DG930 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG930 Datasheet (PDF)

1.1. 3dg930.pdf Size:272K _china

3DG930
3DG930

2SC930(3DG930) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于射频放大,混频振荡,变频和中频放大。 Purpose: RF amplifier, mixer OSC, converter, and IF amplifier. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 20 V CEO V 5.0 V EBO I 30 mA C P 250 mW C T 150 ℃ j T -55

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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