3DK010 Specs and Replacement
Type Designator: 3DK010
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
3DK010 Substitution
- BJT ⓘ Cross-Reference Search
3DK010 datasheet
3DK010 NPN A B C D E PCM TC=25 10 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 15 /W IC=0.2A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=... See More ⇒
Detailed specifications: 3DG847B, 3DG9013, 3DG9014, 3DG930, 3DG945, 3DG945M, 3DK001, 3DK002, A1941, 3DK023F, 3DK024E, 3DK030, 3DK050, 3DK10, 3DK100, 3DK101, 3DK102
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