All Transistors. 3DK29-II Datasheet

 

3DK29-II Datasheet and Replacement


   Type Designator: 3DK29-II
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
      - BJT Cross-Reference Search

   

3DK29-II Datasheet (PDF)

 ..1. Size:24K  shaanxi
 3dk29-ii.pdf pdf_icon

3DK29-II

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK29-IINPN Silicon High Frequency M-Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency small signal

 9.1. Size:169K  china
 3dk29.pdf pdf_icon

3DK29-II

3DK29 NPN A B C D PCM TC=25 1000 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 40 25 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 2.0 A IEBO VEB=4V 1.0

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KT208I | BDY12B | ED1602D | 2SD574A | 2SD1007HR | DRC9143X | SFE245

Keywords - 3DK29-II transistor datasheet

 3DK29-II cross reference
 3DK29-II equivalent finder
 3DK29-II lookup
 3DK29-II substitution
 3DK29-II replacement

 

 
Back to Top

 


 
.