3DK29-II Specs and Replacement
Type Designator: 3DK29-II
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DK29-II Substitution
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3DK29-II datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK29-II NPN Silicon High Frequency M-Power Switch Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency small signal ... See More ⇒
Detailed specifications: 3DK14, 3DK14I, 3DK2, 3DK209, 3DK21, 3DK2222, 3DK28, 3DK29, TIP127, 3DK3039, 3DK32, 3DK3767, 3DK3879, 3DK3B, 3DK4, 3DK402, 3DK405
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