All Transistors. 3DK29-II Datasheet

 

3DK29-II Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK29-II

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

3DK29-II Transistor Equivalent Substitute - Cross-Reference Search

 

3DK29-II Datasheet (PDF)

1.1. 3dk29-ii.pdf Size:24K _china

3DK29-II

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK29-II NPN Silicon High Frequency M-Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency small signal

5.1. 3dk29.pdf Size:169K _china

3DK29-II

3DK29 型 NPN 硅小功率开关晶体管 规范值 参数符号 测试条件 单位 A B C D PCM TC=25℃ 1000 mW 极 ICM 500 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥25 ≥40 ≥25 ≥40 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥15 ≥30 V V(BR)EBO IEB=0.1mA ≥4.0 V ICBO VCB=10V ≤1.0 μA 直 ICEO VCE=10V ≤2.0 μA 流 参 IEBO VEB=4V ≤1.0

Datasheet: D33D3 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , TIP122 , D33J25 , D33J26 , D33J27 , D33J28 , D33J29 , D33J30 , D33K1 , D33K2 .

 
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