3DK50 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

3DK50 Specs and Replacement

Type Designator: 3DK50

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

3DK50 Substitution

- BJT ⓘ Cross-Reference Search

3DK50 datasheet

..1. Size:113K china

3dk50.pdf pdf_icon

3DK50 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55 150 RthJC 1.17 /W V(BR)CBO ICB=3mA 200 V V(BR)CEO ICE=3mA 125 V V(BR)EBO IEB=3mA 7.0 V ICBO VCB=200V 1.0 mA ICEO VCE=10V 1.0 mA IEBO VEB=5V 1 mA VBEsat 1.6 IC=5A V IB... See More ⇒

0.1. Size:237K inchange semiconductor

3dk501d.pdf pdf_icon

isc Silicon NPN Power Transistor 3DK501D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min.) (BR)CEO DC Current Gain h = 20(Min.)@I = 10A FE C Collector-Emitter Saturation Voltage- V )= 1.2V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regul... See More ⇒

Detailed specifications: 3DK32, 3DK3767, 3DK3879, 3DK3B, 3DK4, 3DK402, 3DK405, 3DK40B, A1013, 3DK5886, 3DK5E, 3DK7, 3DK8, 3DK9, 3N1151GP, 3N13003GP, 3N440GP