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3DK5886 Specs and Replacement

Type Designator: 3DK5886

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 3DK5886 Substitution

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3DK5886 datasheet

 ..1. Size:120K  china

 3dk5886.pdf pdf_icon

3DK5886

3DK5886 NPN PCM TC=25 150 W ICM 20 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=5A V(BR)CBO ICB=5mA 250 V V(BR)CEO ICE=5mA 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA IEBO VEB=4V 2.0 mA VBEsat 2.5 ... See More ⇒

Detailed specifications: 3DK3767, 3DK3879, 3DK3B, 3DK4, 3DK402, 3DK405, 3DK40B, 3DK50, 2SB817, 3DK5E, 3DK7, 3DK8, 3DK9, 3N1151GP, 3N13003GP, 3N440GP, 3N772GP

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