3DK9 Specs and Replacement
Type Designator: 3DK9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DK9 Substitution
- BJT ⓘ Cross-Reference Search
3DK9 datasheet
3DK9 NPN A B C D E F G H PCM TC=25 700 mW ICM 800 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 25 50 75 100 25 50 75 100 V V(BR)CEO ICE=0.1mA 20 35 60 80 20 35 60 80 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.5 A ... See More ⇒
Detailed specifications: 3DK402, 3DK405, 3DK40B, 3DK50, 3DK5886, 3DK5E, 3DK7, 3DK8, 13005, 3N1151GP, 3N13003GP, 3N440GP, 3N772GP, 3N882GP, 3RA2114, 3SC2655, 3STF1640
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