PH0814-40 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

PH0814-40 Specs and Replacement

Type Designator: PH0814-40

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 56 V

Maximum Collector-Emitter Voltage |Vce|: 56 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 5.6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1450 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: CERAMIC

PH0814-40 Substitution

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PH0814-40 datasheet

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PH0814-40 Wireless Bipolar Power Transistor M/A-COM Products Released - Rev. 02.11 40W, 850-1450MHz, 28V 1 Outline Drawing Features NPN silicon microwave power transistor Common emitter configuration Broadband Class AB operation Interdigitated geometry Diffused emitter ballasting resistors Gold metalization system Inte... See More ⇒

Detailed specifications: 3N13003GP, 3N440GP, 3N772GP, 3N882GP, 3RA2114, 3SC2655, 3STF1640, 3STL2540, 2SC2240, PH1090-15L, PH1090-175L, PH1090-350L, PH1090-55S, PH1090-700B, PH1090-75L, PH1113-100, PH1214-0.85L