PH0814-40 Datasheet, Equivalent, Cross Reference Search
Type Designator: PH0814-40
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 56 V
Maximum Collector-Emitter Voltage |Vce|: 56 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 5.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1450 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: CERAMIC
PH0814-40 Transistor Equivalent Substitute - Cross-Reference Search
PH0814-40 Datasheet (PDF)
..1. Size:126K macom
ph0814-40.pdf
ph0814-40.pdf
PH0814-40 Wireless Bipolar Power Transistor M/A-COM Products Released - Rev. 02.11 40W, 850-1450MHz, 28V 1 Outline Drawing Features NPN silicon microwave power transistor Common emitter configuration Broadband Class AB operation Interdigitated geometry Diffused emitter ballasting resistors Gold metalization system Inte
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
