All Transistors. PH0814-40 Datasheet

 

PH0814-40 Datasheet and Replacement


   Type Designator: PH0814-40
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 56 V
   Maximum Collector-Emitter Voltage |Vce|: 56 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 5.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1450 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: CERAMIC
 

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PH0814-40 Datasheet (PDF)

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PH0814-40

PH0814-40 Wireless Bipolar Power Transistor M/A-COM Products Released - Rev. 02.11 40W, 850-1450MHz, 28V 1 Outline Drawing Features NPN silicon microwave power transistor Common emitter configuration Broadband Class AB operation Interdigitated geometry Diffused emitter ballasting resistors Gold metalization system Inte

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - PH0814-40 transistor datasheet

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