PH1617-2 Specs and Replacement
Type Designator: PH1617-2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 13.5 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1700 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: CERAMIC
PH1617-2 Substitution
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PH1617-2 datasheet
PH1617-2 Wireless Bipolar Power Transistor M/A-COM Products Released - Rev. 07.07 2W, 16 -1.7 GHz Outline Drawing Features Designed for linear amplifier applications Class AB -33 dBc typ. 3rd IMD at 2 W PEP Class A +44 dBm typ. 3rd order intercept point Common emitter configuration Internal input impedance matching Diffused emitter ballasting ... See More ⇒
Detailed specifications: PH1214-2M, PH1214-300M, PH1214-30EL, PH1214-3L, PH1214-40M, PH1214-55EL, PH1214-6M, PH1214-80M, BD222, PH2226-110M, PH2226-50M, PH2323-3, PH2729-110M, PH2729-130M, PH2729-25M, PH2729-65M, PH2729-8.5M
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