PMB817 Datasheet. Specs and Replacement

Type Designator: PMB817  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3PI

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PMB817 datasheet

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PMB817

PMB817 PNP SILICON EPITAXIAL PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMD1047. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO -160 V Collector Emitter Voltage VCEO -140 V Emitter Base Voltage VEBO -6 V Collector Current IC -12 A Collector Current (Pulse) ICP -15 A 1 Base C... See More ⇒

Detailed specifications: PIMC31, PIMZ2, PMA1302, PMA1516, PMB1370, PMB1626, PMB688, PMB772, 9014, PMBT2222AYS, PMBT2907AYS, PMBT3904M, PMBT3904MB, PMBT3904VS, PMBT3904YS, PMBT3906M, PMBT3906MB

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