All Transistors. PMB817 Datasheet

 

PMB817 Datasheet and Replacement


   Type Designator: PMB817
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3PI
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PMB817 Datasheet (PDF)

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PMB817

PMB817 PNP SILICON EPITAXIAL PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMD1047. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -160 VCollector Emitter Voltage VCEO -140 VEmitter Base Voltage VEBO -6 VCollector Current IC -12 ACollector Current (Pulse) ICP -15 A 1 : Base C

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: HSD882 | STBD138T | TIP29F | 2SC3519 | 3DD13005_F8-1 | 2SD2352 | 2N2907AHR

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