PMB817 Datasheet, Equivalent, Cross Reference Search
Type Designator: PMB817
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3PI
PMB817 Transistor Equivalent Substitute - Cross-Reference Search
PMB817 Datasheet (PDF)
..1. Size:64K pmc components
pmb817.pdf
pmb817.pdf
PMB817 PNP SILICON EPITAXIAL PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMD1047. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO -160 VCollector Emitter Voltage VCEO -140 VEmitter Base Voltage VEBO -6 VCollector Current IC -12 ACollector Current (Pulse) ICP -15 A 1 : Base C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
