All Transistors. PMD18D80 Datasheet

 

PMD18D80 Datasheet, Equivalent, Cross Reference Search


   Type Designator: PMD18D80
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 1200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3

 PMD18D80 Transistor Equivalent Substitute - Cross-Reference Search

   

PMD18D80 Datasheet (PDF)

 ..1. Size:82K  njs
pmd18d80.pdf

PMD18D80
PMD18D80

 8.1. Size:16K  semelab
pmd18d100.pdf

PMD18D80
PMD18D80

PMD18D100SEMELABMECHANICAL DATANPN DARLINGTONDimensions in mmPOWER TRANSISTOR26.6 max. 9.0 max.FEATURES4. 22. 5 TO3 PACKAGE 100V 100A PEAKB E 300 WATTSDESCRIPTIONThe PMD18D100 is an NPN Darlington10.912.8Power Transistor in a hermetic TO3 package.The device is a monolothic epitaxial structureTO3 Package.with built in base-emitter shunt r

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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