PMD19D80 Datasheet and Replacement

   Type Designator: PMD19D80
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 1200 pF
   Forward Current Transfer Ratio (hFE), MIN: 800
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search