PNT723T503E0-2 Datasheet, Equivalent, Cross Reference Search
Type Designator: PNT723T503E0-2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT723
PNT723T503E0-2 Transistor Equivalent Substitute - Cross-Reference Search
PNT723T503E0-2 Datasheet (PDF)
..1. Size:151K prisemi
pnt723t503e0-2.pdf
pnt723t503e0-2.pdf
PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistorFeature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector Package: SOT-723 1 - Base Emitter -Base Breakdown Voltage 11V High DC current gain typical 380 Low Saturation Voltage 80mv 0.15 continuous collector current 2 - Emitter NPN switch transistor Mechan
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
