All Transistors. PNTET50V01 Datasheet

 

PNTET50V01 Datasheet, Equivalent, Cross Reference Search

Type Designator: PNTET50V01

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT523

PNTET50V01 Transistor Equivalent Substitute - Cross-Reference Search

 

PNTET50V01 Datasheet (PDF)

1.1. pntet50v01.pdf Size:121K _upd

PNTET50V01
PNTET50V01

 PNTET50V01 NPN Transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector 1 - Base  Very low collector to emitter saturation voltage  DC current gain >120  0.1A continuous collector current 2 - Emitter  NPN epitaxial planar silicon transistor Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting

Datasheet: PN2222ARLRMG , PN2222ARLRPG , PN2222-H , PN2222-L , PN4209 , PNT23T503E0-2 , PNT523T503E0-2 , PNT723T503E0-2 , C1815 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A .

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