PNTET50V01 Datasheet, Equivalent, Cross Reference Search
Type Designator: PNTET50V01
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT523
PNTET50V01 Transistor Equivalent Substitute - Cross-Reference Search
PNTET50V01 Datasheet (PDF)
1.1. pntet50v01.pdf 
Size:121K _upd
PNTET50V01 NPN Transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector 1 - Base Very low collector to emitter saturation voltage DC current gain >120 0.1A continuous collector current 2 - Emitter NPN epitaxial planar silicon transistor Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting
Datasheet: PN2222ARLRMG , PN2222ARLRPG , PN2222-H , PN2222-L , PN4209 , PNT23T503E0-2 , PNT523T503E0-2 , PNT723T503E0-2 , C1815 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , PQMD12 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A .
