All Transistors. PNTET50V01 Datasheet

 

PNTET50V01 Datasheet, Equivalent, Cross Reference Search

Type Designator: PNTET50V01

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT523

PNTET50V01 Transistor Equivalent Substitute - Cross-Reference Search

 

PNTET50V01 Datasheet (PDF)

1.1. pntet50v01.pdf Size:121K _upd

PNTET50V01
PNTET50V01

 PNTET50V01 NPN Transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector 1 - Base  Very low collector to emitter saturation voltage  DC current gain >120  0.1A continuous collector current 2 - Emitter  NPN epitaxial planar silicon transistor Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting

Datasheet: D33D3 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , TIP122 , D33J25 , D33J26 , D33J27 , D33J28 , D33J29 , D33J30 , D33K1 , D33K2 .

 
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