All Transistors. PNTET50V01 Datasheet

 

PNTET50V01 Datasheet and Replacement


   Type Designator: PNTET50V01
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT523
 

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PNTET50V01 Datasheet (PDF)

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PNTET50V01

PNTET50V01 NPN Transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector 1 - Base Very low collector to emitter saturation voltage DC current gain >120 0.1A continuous collector current 2 - Emitter NPN epitaxial planar silicon transistor Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC532 | 2SD1614XL | BC385B

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