PNTET50V01 Specs and Replacement
Type Designator: PNTET50V01
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT523
PNTET50V01 Substitution
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PNTET50V01 datasheet
PNTET50V01 NPN Transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. 3 - Collector 1 - Base Very low collector to emitter saturation voltage DC current gain >120 0.1A continuous collector current 2 - Emitter NPN epitaxial planar silicon transistor Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting... See More ⇒
Detailed specifications: PN2222ARLRMG, PN2222ARLRPG, PN2222-H, PN2222-L, PN4209, PNT23T503E0-2, PNT523T503E0-2, PNT723T503E0-2, S8050, PPT523T503E0-2, PPT89T30V5AE2M, PPT8N30E2, PQMD12, PT236T30E2, PT236T30E2H, PT236T30E2M, PT23T2222A
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