All Transistors. PPT89T30V5AE2M Datasheet

 

PPT89T30V5AE2M Datasheet, Equivalent, Cross Reference Search

Type Designator: PPT89T30V5AE2M

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

PPT89T30V5AE2M Transistor Equivalent Substitute - Cross-Reference Search

 

PPT89T30V5AE2M Datasheet (PDF)

1.1. ppt89t30v5ae2m.pdf Size:127K _upd

PPT89T30V5AE2M
PPT89T30V5AE2M

 PPT89T30V5AE2M Transistor Feature 2 - Collector 1 - Base This device is Pb-Free and RoHS compliant. PNP epitaxial planar silicon transistor 3 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260℃ Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:≤3m

Datasheet: D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , S8050 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , D33D24 , D33D25 .

 
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