All Transistors. PPT89T30V5AE2M Datasheet

 

PPT89T30V5AE2M Datasheet and Replacement


   Type Designator: PPT89T30V5AE2M
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
 

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PPT89T30V5AE2M Datasheet (PDF)

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PPT89T30V5AE2M

PPT89T30V5AE2M Transistor Feature 2 - Collector 1 - Base This device is Pb-Free and RoHS compliant. PNP epitaxial planar silicon transistor 3 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3m

Datasheet: PN2222-H , PN2222-L , PN4209 , PNT23T503E0-2 , PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , 2SA1943 , PPT8N30E2 , PQMD12 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 .

History: 2N3615 | 2SD1615GK

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