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PPT8N30E2 Datasheet, Equivalent, Cross Reference Search

Type Designator: PPT8N30E2

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: DFN3X2-8L

PPT8N30E2 Transistor Equivalent Substitute - Cross-Reference Search

PPT8N30E2 Datasheet (PDF)

1.1. ppt8n30e2.pdf Size:130K _upd

PPT8N30E2
PPT8N30E2

 PPT8N30E2 Transistor Feature 8(C) 7(C) 6(C) 5(E) This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.  Very low collector to emitter saturation voltage  DC current gain >100  3A continuous collector current  PNP epitaxial planar silicon transistor 2(C) 3(C) 4(B) 1(C) Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting pos

Datasheet: PN2222-L , PN4209 , PNT23T503E0-2 , PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , S8550 , PQMD12 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 .

 


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