PPT8N30E2 Datasheet, Equivalent, Cross Reference Search
Type Designator: PPT8N30E2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: DFN3X2-8L
PPT8N30E2 Transistor Equivalent Substitute - Cross-Reference Search
PPT8N30E2 Datasheet (PDF)
1.1. ppt8n30e2.pdf 
Size:130K _upd
PPT8N30E2 Transistor Feature 8(C) 7(C) 6(C) 5(E) This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor 2(C) 3(C) 4(B) 1(C) Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting pos
Datasheet: D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , S8050 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , D33D24 , D33D25 .
