PPT8N30E2 Datasheet, Equivalent, Cross Reference Search
Type Designator: PPT8N30E2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: DFN3X2-8L
PPT8N30E2 Transistor Equivalent Substitute - Cross-Reference Search
PPT8N30E2 Datasheet (PDF)
..1. Size:166K prisemi
ppt8n30e2.pdf
ppt8n30e2.pdf
PPT8N30E2 Transistor Feature 8(C) 7(C) 6(C) 5(E) This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor 2(C) 3(C) 4(B) 1(C) Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting p
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
