All Transistors. PPT8N30E2 Datasheet

 

PPT8N30E2 Datasheet and Replacement


   Type Designator: PPT8N30E2
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: DFN3X2-8L
 

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PPT8N30E2 Datasheet (PDF)

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PPT8N30E2

PPT8N30E2 Transistor Feature 8(C) 7(C) 6(C) 5(E) This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor 2(C) 3(C) 4(B) 1(C) Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting p

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: PPT523T503E0-2 | MMBT3906TT1G

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