All Transistors. PPT8N30E2 Datasheet

 

PPT8N30E2 Datasheet and Replacement


   Type Designator: PPT8N30E2
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: DFN3X2-8L
 

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PPT8N30E2 Datasheet (PDF)

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PPT8N30E2

PPT8N30E2 Transistor Feature 8(C) 7(C) 6(C) 5(E) This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor 2(C) 3(C) 4(B) 1(C) Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting p

Datasheet: PN2222-L , PN4209 , PNT23T503E0-2 , PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , TIP3055 , PQMD12 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 .

History: 2SA1464 | PPT523T503E0-2

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