All Transistors. PPT8N30E2 Datasheet

 

PPT8N30E2 Datasheet, Equivalent, Cross Reference Search

Type Designator: PPT8N30E2

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: DFN3X2-8L

PPT8N30E2 Transistor Equivalent Substitute - Cross-Reference Search

 

PPT8N30E2 Datasheet (PDF)

1.1. ppt8n30e2.pdf Size:130K _upd

PPT8N30E2
PPT8N30E2

 PPT8N30E2 Transistor Feature 8(C) 7(C) 6(C) 5(E) This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.  Very low collector to emitter saturation voltage  DC current gain >100  3A continuous collector current  PNP epitaxial planar silicon transistor 2(C) 3(C) 4(B) 1(C) Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting pos

Datasheet: D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , S8050 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , D33D24 , D33D25 .

 
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