PPT8N30E2 Specs and Replacement
Type Designator: PPT8N30E2
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: DFN3X2-8L
PPT8N30E2 Substitution
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PPT8N30E2 datasheet
PPT8N30E2 Transistor Feature 8(C) 7(C) 6(C) 5(E) This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar silicon transistor 2(C) 3(C) 4(B) 1(C) Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting p... See More ⇒
Detailed specifications: PN2222-L, PN4209, PNT23T503E0-2, PNT523T503E0-2, PNT723T503E0-2, PNTET50V01, PPT523T503E0-2, PPT89T30V5AE2M, A1015, PQMD12, PT236T30E2, PT236T30E2H, PT236T30E2M, PT23T2222A, PT23T2907A, PT23T3904, PT23T3906
Keywords - PPT8N30E2 pdf specs
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