PQMD12 Datasheet, Equivalent, Cross Reference Search
Type Designator: PQMD12
SMD Transistor Code: 110000
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 230 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT1216
PQMD12 Transistor Equivalent Substitute - Cross-Reference Search
PQMD12 Datasheet (PDF)
1.1. pqmd12.pdf 
Size:195K _upd
PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 8 July 2015 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit desig
Datasheet: D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , S8050 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , D33D24 , D33D25 .
