All Transistors. PQMD12 Datasheet

 

PQMD12 Datasheet, Equivalent, Cross Reference Search

Type Designator: PQMD12

Marking Code: 110000

Material of Transistor: Si

Polarity: NPN*PNP

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 230 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT1216

PQMD12 Transistor Equivalent Substitute - Cross-Reference Search

PQMD12 Datasheet (PDF)

1.1. pqmd12.pdf Size:195K _upd

PQMD12
PQMD12

PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 8 July 2015 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit desig

Datasheet: PN4209 , PNT23T503E0-2 , PNT523T503E0-2 , PNT723T503E0-2 , PNTET50V01 , PPT523T503E0-2 , PPT89T30V5AE2M , PPT8N30E2 , 8550 , PT236T30E2 , PT236T30E2H , PT236T30E2M , PT23T2222A , PT23T2907A , PT23T3904 , PT23T3906 , PT23T5401 .

 


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