PQMD12 Datasheet, Equivalent, Cross Reference Search
Type Designator: PQMD12
SMD Transistor Code: 110000
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 230 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT1216
PQMD12 Transistor Equivalent Substitute - Cross-Reference Search
PQMD12 Datasheet (PDF)
pqmd12.pdf
PQMD12NPN/PNP resistor-equipped transistors;R1 = 47 k, R2 = 47 k8 July 2015 Product data sheet1. General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.2. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit desig
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .