2N5088G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5088G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO-92
2N5088G Transistor Equivalent Substitute - Cross-Reference Search
2N5088G Datasheet (PDF)
2n5088g.pdf
2N5088, 2N5089Amplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*3 COLLECTOR2MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc1 EMITTER2N5088 302N5089 25Collector - Base Voltage VCBO Vdc2N5088 35TO-922N5089 30CASE 29Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1Collector Current - Conti
2n5088 2n5089.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5088/DAmplifier TransistorsNPN Silicon2N50882N5089COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N508 2N508 UnitTO92 (TO226AA)8 9CollectorEmitter Voltage VCEO 30 25 VdcCollectorBase Voltage VCBO 35 30 VdcEmitterBase Voltage VEBO 3.0 VdcCollec
2n5088 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5088NPN general purpose transistor1997 Sep 03Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor 2N5088FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 30 V).1 co
2n5088 mmbt5088 2n5089 mmbt5089.pdf
2N5088 MMBT50882N5089 MMBT5089CEC TO-92BBSOT-23EMark: 1Q / 1RNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 2N5088 30 V2N5089 25 VVCBO
2n5088-2n5089.pdf
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 2N5088: 30V2N5089: 25V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage :2N5088 VCBO2N5089 30 VCollector-Emitter Voltage :2N5088 VCEO 30 V2N5089 25 V Emitter-Base Voltage VEBO 4.5 V
2n5088 2n5089.pdf
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2n5088 2n5089.pdf
2N5088, 2N5089Amplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*3 COLLECTOR2MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc1 EMITTER2N5088 302N5089 25Collector - Base Voltage VCBO Vdc2N5088 35TO-922N5089 30CASE 29Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1Collector Current - Conti
2n5088 89.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTORS 2N50882N5089TO-92CBECBEAmplifier TransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N5088 2N5089 UNITSCollector -Base Voltage VCBO 35 30 VCollector -Emitter Voltage VCE0 30 25 VEmitter -Base Voltage VEBO 4.5 VCollector Current- Continuous I
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
